?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fqpf8n60cf rev. a fqpf8n60cf 600v n-channel mosfet february 2006 frfet tm fqpf8n60cf 600v n-channel mosfet features ? 6.26a, 600v, r ds(on) = 1.5 ? @v gs = 10 v ? low gate charge ( typical 28 nc) ? low crss ( typical 12 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. absolute maximum ratings thermal characteristics d g s to-220f fqpf series gs d symbol parameter FQPF8N60CFT units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 6.26* a - continuous (t c = 100c) 3.96* a i dm drain current - pulsed (note 1) 25* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 160 mj i ar avalanche current (note 1) 6.26 a e ar repetitive avalanche energy (note 1) 14.7 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 48 w - derate above 25c 0.38 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter fqpf8n60cf units r jc thermal resistance, junction-to-case 2.6 c / w r ja thermal resistance, junction-to-ambient 62.5 c / w * drain current limited by maximum junction temperature
2 www.fairchildsemi.com fqpf8n60cf rev. a fqpf8n60cf 600v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 7.3mh, i as = 6.26a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 6.26a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity FQPF8N60CFT FQPF8N60CFT to-220f -- -- 50 symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.7 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 a v ds = 480 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.0--4.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.13 a -- 1.25 1.5 ? g fs forward transconductance v ds = 40 v, i d =3.13 a (note 4) -- 8.7 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 965 1255 pf c oss output capacitance -- 105 135 pf c rss reverse transfer capacitance -- 12 16 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 6.26a, r g = 25 ? (note 4, 5) -- 16.5 45 ns t r turn-on rise time -- 60.5 130 ns t d(off) turn-off delay time -- 81 170 ns t f turn-off fall time -- 64.5 140 ns q g total gate charge v ds = 480 v, i d = 6.26a, v gs = 10 v (note 4, 5) -- 28 36 nc q gs gate-source charge -- 4.5 -- nc q gd gate-drain charge -- 12 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 6.26 a i sm maximum pulsed drain-source diode forward current -- -- 25 a v sd drain-source diode forward voltage v gs = 0 v, i s = 6.26 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 6.26 a, di f / dt = 100 a/ s (note 4) -- 82 -- ns q rr reverse recovery charge -- 242 -- nc
3 www.fairchildsemi.com fqpf8n60cf rev. a fqpf8n60cf 600v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v * note : i d = 6.26a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
4 www.fairchildsemi.com fqpf8n60cf rev. a fqpf8n60cf 600v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 ae bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 3.13 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z ?jc (t) = 2.6 ? /w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ?jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fqpf8n60cf rev. a fqpf8n60cf 600v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fqpf8n60cf rev. a fqpf8n60cf 600v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fqpf8n60cf rev. a fqpf8n60cf 600v n-channel mosfet mechanical dimensions (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 to-220f dimensions in millimeters
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